Master Thesis - Investigation of Gate-Induced Strain Fields in Spin Qubits via Cryogenic TEM | Master Thesis - Investigation of gate-induced strain fields in sp...

Job Summary

Undertake a Master's thesis focused on investigating gate-induced strain fields in Si/Ge spin qubits using advanced cryogenic scanning-transmission electron microscopy (STEM). This role involves extracting TEM lamellae from spin qubit devices using focused ion beam (FIB) technology, followed by detailed strain analysis using techniques like geometrical phase analysis and 4D STEM. You will compare measurements at room and cryogenic temperatures, contributing to a deeper understanding of how gate configurations influence strain and disorder in quantum devices. The position offers the opportunity to develop expertise in state-of-the-art quantum devices, nanoscale characterization, and Python-based data analysis within a world-class research institute.