Research Associate for GaN-based Power Amplifier Design for MRT/MRI Systems | 190/2025 Research Associate (m/f/d) GaN based Power Amplifier Design for MRT/MRI-Systems

Master's degree (at least 'good' grade) in Electrical Engineering (specializing in Circuit Technology, High-Frequency Technology, Microelectronics) or comparable disciplines. Doctoral qualification opportunity provided.

• Experience in discrete power amplifier circuit design for RF transmission paths using GaN, GaO, or InP technology
• Experience in modeling and verification of power semiconductors in amplifier classes (e.g., Class A, AB, D)
• Experience in simulation, development, and construction of amplifier architectures (e.g., Doherty, Envelope Tracking, Load-modulated balanced or LINC) for linearity and MRI imaging applications
• Experience in development and verification of circuit parts using EDA tools (e.g., Keysight Advanced Design System, Ansys HFSS)
• Experience in conducting and evaluating circuit simulations (e.g., Harmonic Balance, PSS, Transient analyses) and electromagnetic field simulations
• Experience in building and heterogeneous integration of modules and boards from discrete ICs and COTS components
• Experience in metrological verification of systems and assemblies at power levels up to 2kW peak

• Opportunity for scientific qualification within a doctoral program is provided. Position is temporary until December 31, 2027. Full-time position (100%).