Engineer | Ingenieur (m/w/d)
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Job Summary
This role is for an experienced Engineer to join the Microelectronics department at the Fraunhofer Institute for Applied Solid State Physics (IAF), a leader in applied research focusing on the entire semiconductor value chain. The successful candidate will be responsible for developing, designing, and implementing high-performance Gallium Nitride (GaN) components, circuits, and modules for high-frequency applications up to 10 GHz. Key tasks involve contributing expertise from the concept phase through to characterization, focusing on groundbreaking high-frequency systems, communication solutions, and radar technologies. This position requires a Master's degree or Diploma in a relevant engineering field (ideally with a PhD), comprehensive knowledge of high-power RF component system design, and expertise in simulation and measurement tools like ADS, CST, and HFSS. The role offers a modern, international work environment, access to cutting-edge research infrastructure, and opportunities for professional development and interdisciplinary collaboration.
Required Skills
Education
Completed University Degree (Diploma or Master) in Electrical Engineering, Microsystems Engineering, Communications Engineering, or Physics; ideally with a PhD
Experience
- Professional experience in the design of hybrid high-frequency modules up to 10 GHz
- Experience in research and industrial projects, ideally in a responsible role
- Comprehensive knowledge in the system design of HF high-power components
Languages
Additional
- Team spirit, strong communication skills, and an independent scientific working style required.
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