Physicist / Scientist for Device Development | Physiker (m/w/d)
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Job Summary
This role at the Fraunhofer Institute for Applied Solid State Physics (IAF) is for a dedicated scientist specializing in device development, focusing on microelectronic components and circuits for high-frequency technology and power electronics based on GaN semiconductor material. The successful candidate will collaborate with colleagues to enhance device properties, including power density, efficiency, yield, and reliability. They will also be responsible for acquiring and managing national and international research and development projects in collaboration with epitaxy and microelectronics departments, driving innovative, interdisciplinary projects forward to develop future-oriented solutions. This position offers access to cutting-edge research infrastructure and the opportunity to shape personal research within a supportive, innovative team environment.
Required Skills
Education
University degree (Master/Diploma) in Physics, Electrical Engineering, or Microsystems Technology, ideally with a doctorate (PhD)
Experience
- Professional experience in semiconductor technology, especially in GaN electronics
- Knowledge of material sciences and the functionality of electronic semiconductor devices
- Ideally, experience in acquiring and leading projects
Languages
Additional
- Not specified
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