Research Associate (Scientific Staff) | Wissenschaftliche Mitarbeiterin/ Wissenschaftlicher Mitarbeiter (m/w/d) 161/2025

Job Summary

This Research Associate position at the Institute for Applied Physics focuses on cutting-edge research related to High-Electron-Mobility Transistors (HEMTs) based on Gallium Nitride (GaN) for energy-efficient power electronics. The core responsibility involves developing and optimizing processes for Atomic Layer Etching (ALE) and Atomic Layer Deposition (ALD) of high-k dielectrics within the university's central cleanroom laboratory. Day-to-day tasks include modifying interfaces and depositing thin dielectric layers to influence device properties, alongside electrical and defect spectroscopic characterization of the fabricated components. The role requires a strong background in semiconductor physics and technology, practical cleanroom experience, and a willingness to pursue a doctorate (Promotion). The associate will present findings at national and international conferences and publish results in scientific journals, working collaboratively within the DFG Priority Program "Nitrides4Future."