Lead Principal Engineer GaN IC Development | Lead Principal Engineer GaN IC Development (f/m/div)

Job Summary

This role involves leading the technical development of a new GaN platform technology, coordinating project activities from process definition to system integration. The successful candidate will develop new technology and device concepts for pGaN-based HEMT, specifically focusing on FEOL and BEOL integration schemes in a 300mm GaN line. This position requires leading design activities for technology test chips and supporting lead product development within an international, multi-site team. Collaboration with application engineering, TCAD concept teams, and wafer fab unit process development engineers is crucial to define technology specifications and develop new processes. The role also acts as a key interface to Product Line and R&D management, providing essential technical advice for strategic decisions. This is an exciting opportunity for an innovation-driven professional to make a significant impact in the semiconductor industry.