Senior Principal GaN Epitaxy Engineer | Senior Principal GaN Epitaxy Engineer (m/f/d)

Nexperia Germany GmbH

Hamburg, Hamburg, Deutschland
Published Jul 3, 2025
Full-time
Permanent

Job Summary

This role is for a Senior Principal GaN Epitaxy Engineer to drive the development of GaN on silicon using MOCVD tools for 6-inch and 8-inch substrates. The successful candidate will lead engineering efforts on epi reactors, diagnose tool problems, and support material and electrical characterizations. They will define, organize, and validate process developments for epitaxial growth, focusing on optimization and timely project execution. This position involves close collaboration with internal and external teams, contributing to research programs, and transferring optimized processes to operational teams and industrial partners. The role requires a hands-on approach, including cleanroom work, and involves presenting results at conferences and publishing in scientific journals.

Required Skills

Education

Minimum Master's Degree (PhD preferred) in physics, material sciences or a similar engineering field

Experience

  • More than 5 years of relevant working experience
  • Experience working with MOVCD/MOVPE production tool sets
  • Very good understanding and experience of growing GaN from silicon substrate through buffer layers into bulk GaN
  • Experience leading small teams and creating positive results
  • Experience working in dynamic semiconductor industry and the commercial demands placed on time to market with new process technologies

Languages

German (Basic)English (Fluent)

Additional

  • Not specified