Senior Principal GaN Epitaxy Engineer | Senior Principal GaN Epitaxy Engineer (m/f/d)
Nexperia Germany GmbH
Job Summary
This role is for a Senior Principal GaN Epitaxy Engineer to drive the development of GaN on silicon using MOCVD tools for 6-inch and 8-inch substrates. The successful candidate will lead engineering efforts on epi reactors, diagnose tool problems, and support material and electrical characterizations. They will define, organize, and validate process developments for epitaxial growth, focusing on optimization and timely project execution. This position involves close collaboration with internal and external teams, contributing to research programs, and transferring optimized processes to operational teams and industrial partners. The role requires a hands-on approach, including cleanroom work, and involves presenting results at conferences and publishing in scientific journals.
Required Skills
Education
Minimum Master's Degree (PhD preferred) in physics, material sciences or a similar engineering field
Experience
- More than 5 years of relevant working experience
- Experience working with MOVCD/MOVPE production tool sets
- Very good understanding and experience of growing GaN from silicon substrate through buffer layers into bulk GaN
- Experience leading small teams and creating positive results
- Experience working in dynamic semiconductor industry and the commercial demands placed on time to market with new process technologies
Languages
Additional
- Not specified
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