Research Scientist - GaN Technology | Wissenschaftler(m/w/d) - GaN-Technologie
Fraunhofer-Gesellschaft e.V. Zentrale München
Job Summary
This role is for a Research Scientist specializing in GaN technology at the Fraunhofer Institute for Applied Solid State Physics (IAF). The successful candidate will be instrumental in developing innovative processes to enhance the properties of microelectronic components and circuits, focusing on power density, efficiency, yield, and reliability. Day-to-day tasks involve collaborating with colleagues in epitaxy and microelectronics departments to acquire and manage national and international R&D projects, driving interdisciplinary initiatives to create future-oriented solutions. This position offers an exciting opportunity to contribute to cutting-edge research in semiconductor technology within a leading applied research organization, developing technology for a sustainable and secure society.
Required Skills
Education
University degree (Master/Diploma) in Physics, Electrical Engineering, or Microsystems Technology, ideally with a PhD
Experience
- Professional experience in semiconductor technology, especially GaN electronics
- Knowledge in material sciences and the functionality of electronic semiconductor devices
- Experience in project acquisition and leadership (ideally)
Languages
Additional
- Not specified
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